Silicon Wafer Low Temp Anodic Oxidation Attempt in Aqueous Potassium Nitrate Solution

I wanted to try anodic oxidation because it would allow me to grow SiO2 dielectric layers much quicker and also at room temperature. The result, while using potassium nitrate solution, was a very dirty growth later that would only be suited for a field oxide on a diode and far from precise enough for a gate oxide on a FET. Possibly with more refining in the future this could save me a lot of time waiting for furnaces to heat up.

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