https://www.youtube.com/watch?v=KgTqeUk6XS8
I wanted to try anodic oxidation because it would allow me to grow SiO2 dielectric layers much quicker and also at room temperature. The result, while using potassium nitrate solution, was a very dirty growth later that would only be suited for a field oxide on a diode and far from precise enough for a gate oxide on a FET. Possibly with more refining in the future this could save me a lot of time waiting for furnaces to heat up.