First pictures show wafers with 5000A field oxide, then etched active region for the anode with HF. As you can see on the curve tracer, reverse bias conditions are surprisingly good with little leakage current down to -6 volts.
First pictures show wafers with 5000A field oxide, then etched active region for the anode with HF. As you can see on the curve tracer, reverse bias conditions are surprisingly good with little leakage current down to -6 volts.
I’m Arvind from chennai, india. I want to make one Gaas laser diode in home. Please help me in equipment and chemicals procuring. This is my contact number+91 8220705987. I desparately need your tech support. Help me Sam.